Nexperia B.V. 60 V, 1.7 A PNP low VCEsat transistor PBSS5260QA-QZ

Description
NPN low VCEsat transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement: PBSS4260QA-Q Features and benefits Very Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC High energy efficiency due to less heat generation Reduced Printed-Circuit Board (PCB) area requirments Solderable side pads Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
  • 60 V, 1.7 A PNP low VCEsat transistor - PBSS5260QA-QZ - Nexperia B.V.
    Nexperia B.V.
  • Single Bipolar Transistors - 1727-PBSS5260QA-QZTR-ND - DigiKey
    DigiKey
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Description
NPN low VCEsat transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement: PBSS4260QA-Q Features and benefits Very Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC High energy efficiency due to less heat generation Reduced Printed-Circuit Board (PCB) area requirments Solderable side pads Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
Request a Quote
Datasheet
Datasheet Summary
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60 V, 1.7 A PNP low VCEsat transistor in a leadless ultra small DFN1010D-3 (SOT1215) surface-mounted plastic package measuring 1.1 mm x 1 mm x 0.37 mm with solderable side pads. Collector-emitter saturation voltage is specified up to 500 mV at 1.7 A collector current and 170 mA base current. Peak collector current is 2.5 A for pulses up to 1 ms. Qualified to AEC-Q101 for automotive applications.

Datasheet Summary
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60 V, 1.7 A PNP low VCEsat transistor in a leadless ultra small DFN1010D-3 (SOT1215) surface-mounted plastic package measuring 1.1 mm x 1 mm x 0.37 mm with solderable side pads. Collector-emitter saturation voltage is specified up to 500 mV at 1.7 A collector current and 170 mA base current. Peak collector current is 2.5 A for pulses up to 1 ms. Qualified to AEC-Q101 for automotive applications.

Suppliers

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Supplier Links
60 V, 1.7 A PNP low VCEsat transistor - PBSS5260QA-QZ - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
60 V, 1.7 A PNP low VCEsat transistor
PBSS5260QA-QZ
60 V, 1.7 A PNP low VCEsat transistor PBSS5260QA-QZ
NPN low VCEsat transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement: PBSS4260QA-Q Features and benefits Very Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC High energy efficiency due to less heat generation Reduced Printed-Circuit Board (PCB) area requirments Solderable side pads Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)

NPN low VCEsat transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.

PNP complement: PBSS4260QA-Q

Features and benefits

  • Very Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain hFE at high IC
  • High energy efficiency due to less heat generation
  • Reduced Printed-Circuit Board (PCB) area requirments
  • Solderable side pads
  • Qualified according to AEC-Q101 and recommended for use in automotive applications

Applications

  • Loadswitch
  • Battery-driven devices
  • Power management
  • Charging circuits
  • Power switches (e.g. motors, fans)
Supplier's Site Datasheet
Single Bipolar Transistors - 1727-PBSS5260QA-QZTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-PBSS5260QA-QZTR-ND
Single Bipolar Transistors 1727-PBSS5260QA-QZTR-ND
PBSS5260QA-Q/SOT1215 /DFN1010D-

PBSS5260QA-Q/SOT1215/DFN1010D-

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Technical Specifications

  Nexperia B.V. DigiKey
Product Category Transistors Transistors
Product Number PBSS5260QA-QZ 1727-PBSS5260QA-QZTR-ND
Product Name 60 V, 1.7 A PNP low VCEsat transistor Single Bipolar Transistors
Package Type SOT1215 SOT1215 3-XDFN Exposed Pad
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