Nexperia B.V. 60 V, 1 A PNP low VCEsat transistor PBSS5160U-QX

Description
PNP low VCEsat transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Qualified according to AEC-Q101 and recommended for use in automotive applications Applications High voltage DC-to-DC conversion High voltage MOSFET gate driving High voltage motor control High voltage power switches (e.g. motors, fans) Automotive applications
Request a Quote
Description
PNP low VCEsat transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Qualified according to AEC-Q101 and recommended for use in automotive applications Applications High voltage DC-to-DC conversion High voltage MOSFET gate driving High voltage motor control High voltage power switches (e.g. motors, fans) Automotive applications
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

PNP low VCEsat transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package measuring 2 mm x 1.25 mm x 0.95 mm. It has a collector-emitter voltage rating of -60 V, a continuous collector current of -1 A, and a peak collector current of -2 A. The collector-emitter saturation voltage is -255 mV to -340 mV at -1 A collector current and -100 mA base current. The device has a DC current gain (hFE) of 100 to 350 and a thermal resistance from junction to ambient of 301 K/W when mounted on a ceramic PCB. It is qualified according to AEC-Q101 for automotive applications.

Datasheet Summary
Powered by GS/AI

PNP low VCEsat transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package measuring 2 mm x 1.25 mm x 0.95 mm. It has a collector-emitter voltage rating of -60 V, a continuous collector current of -1 A, and a peak collector current of -2 A. The collector-emitter saturation voltage is -255 mV to -340 mV at -1 A collector current and -100 mA base current. The device has a DC current gain (hFE) of 100 to 350 and a thermal resistance from junction to ambient of 301 K/W when mounted on a ceramic PCB. It is qualified according to AEC-Q101 for automotive applications.

Suppliers

Company
Product
Description
Supplier Links
60 V, 1 A PNP low VCEsat transistor - PBSS5160U-QX - Nexperia B.V.
Nijmegen, Netherlands
60 V, 1 A PNP low VCEsat transistor
PBSS5160U-QX
60 V, 1 A PNP low VCEsat transistor PBSS5160U-QX
PNP low VCEsat transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Qualified according to AEC-Q101 and recommended for use in automotive applications Applications High voltage DC-to-DC conversion High voltage MOSFET gate driving High voltage motor control High voltage power switches (e.g. motors, fans) Automotive applications

PNP low VCEsat transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package.

Features and benefits

  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain (hFE) at high IC
  • High efficiency due to less heat generation
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
  • Qualified according to AEC-Q101 and recommended for use in automotive applications

Applications

  • High voltage DC-to-DC conversion
  • High voltage MOSFET gate driving
  • High voltage motor control
  • High voltage power switches (e.g. motors, fans)
  • Automotive applications
Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V.
Product Category Transistors
Product Number PBSS5160U-QX
Product Name 60 V, 1 A PNP low VCEsat transistor
Package Type SOT323; SOT323 SOT323
Unlock Full Specs
to access all available technical data

Similar Products

50 V, 100 mA NPN general-purpose transistors - 2PD601ARL,215 - Nexperia B.V.
Specs
Transistor Type BJT
Package Type SOT23; SOT23 SOT23
View Details
8 suppliers
60 V, 300 mA N-channel Trench MOSFET - 2N7002,215 - Nexperia B.V.
Specs
Transistor Type MOSFET
Package Type SOT23; SOT23 SOT23
View Details
8 suppliers
45 V, 500 mA PNP general-purpose transistors - BC807-16,215 - Nexperia B.V.
Specs
Transistor Type BJT
Package Type SOT23; SOT23 SOT23
View Details
8 suppliers
Channel Type Nexperia - 28AC7865 - Newark, An Avnet Company
Specs
Package Type TO-3
View Details