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Nexperia B.V. 60 V, 300 mA N-channel Trench MOSFET 2N7002,215

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Product
Description
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60 V, 300 mA N-channel Trench MOSFET - 2N7002,215 - Nexperia B.V.
Nijmegen, Netherlands
60 V, 300 mA N-channel Trench MOSFET
2N7002,215
60 V, 300 mA N-channel Trench MOSFET 2N7002,215
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOSFET technology. Features and benefits Suitable for logic level gate drive sources Very fast switching Surface-mounted package Trench MOSFET technology Applications Logic level translators High-speed line drivers

N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOSFET technology.

Features and benefits

  • Suitable for logic level gate drive sources
  • Very fast switching
  • Surface-mounted package
  • Trench MOSFET technology

Applications

  • Logic level translators
  • High-speed line drivers
Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 2N7002,215 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
2N7002,215
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 2N7002,215
MOSFET N-CH 60V 300MA TO236AB

MOSFET N-CH 60V 300MA TO236AB

Supplier's Site
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
2N7002,215
Triode/MOS Tube/Transistor >> MOSFETs 2N7002,215
60V 300mA 5Ω@10V,500mA 830mW 2.5V@250uA N Channel SOT-23 MOSFETs ROHS

60V 300mA 5Ω@10V,500mA 830mW 2.5V@250uA N Channel SOT-23 MOSFETs ROHS

Supplier's Site Datasheet
 - 2N7002,215 - Rochester Electronics
Newburyport, MA, United States
2N7002 - 60 V N-channel Trench MOSFET

2N7002 - 60 V N-channel Trench MOSFET

Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-2764-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2764-6-ND
Single FETs, MOSFETs 1727-2764-6-ND
N-Channel 60V 300mA (Ta) 830mW (Ta) Surface Mount TO-236AB

N-Channel 60V 300mA (Ta) 830mW (Ta) Surface Mount TO-236AB

Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-2764-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2764-1-ND
Single FETs, MOSFETs 1727-2764-1-ND
N-Channel 60V 300mA (Ta) 830mW (Ta) Surface Mount TO-236AB

N-Channel 60V 300mA (Ta) 830mW (Ta) Surface Mount TO-236AB

Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-2764-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2764-2-ND
Single FETs, MOSFETs 1727-2764-2-ND
N-Channel 60V 300mA (Ta) 830mW (Ta) Surface Mount TO-236AB

N-Channel 60V 300mA (Ta) 830mW (Ta) Surface Mount TO-236AB

Supplier's Site Datasheet
Mosfet, N-Ch, 60V, 0.3A, 0.83W, To-236Ab; Channel Type Nexperia - 11N8527 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 60V, 0.3A, 0.83W, To-236Ab; Channel Type Nexperia
11N8527
Mosfet, N-Ch, 60V, 0.3A, 0.83W, To-236Ab; Channel Type Nexperia 11N8527
MOSFET, N-CH, 60V, 0.3A, 0.83W, TO-236AB; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:300mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

MOSFET, N-CH, 60V, 0.3A, 0.83W, TO-236AB; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:300mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, N-Ch, 60V, 0.3A, 0.83W, To-236Ab; Channel Type Nexperia - 95W1677 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 60V, 0.3A, 0.83W, To-236Ab; Channel Type Nexperia
95W1677
Mosfet, N-Ch, 60V, 0.3A, 0.83W, To-236Ab; Channel Type Nexperia 95W1677
MOSFET, N-CH, 60V, 0.3A, 0.83W, TO-236AB; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:300mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

MOSFET, N-CH, 60V, 0.3A, 0.83W, TO-236AB; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:300mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. Shenzhen Shengyu Electronics Technology Limited LCSC Electronics Technology (HK) Limited Rochester Electronics DigiKey Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 2N7002,215 2N7002,215 2N7002,215 2N7002,215 1727-2764-6-ND 11N8527
Product Name 60 V, 300 mA N-channel Trench MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Triode/MOS Tube/Transistor >> MOSFETs Single FETs, MOSFETs Mosfet, N-Ch, 60V, 0.3A, 0.83W, To-236Ab; Channel Type Nexperia
Polarity N-Channel N-Channel N-Channel N-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS 60 volts 60 volts
IDSS 300 milliamps 300 milliamps
VGS(off) 2 volts 2.5 volts
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