2N7002 is an N-channel enhancement mode Field-Effect Transistor using Trench MOSFET technology for logic level switching applications. It is packaged in a SOT23 (TO-236AB) surface-mounted case measuring 2.9 mm by 1.3 mm. The device has a drain-source voltage rating of 60 V, a continuous drain current of 300 mA at 25 °C, and a total power dissipation of 0.83 W. The drain-source on-state resistance is 2.8 Ω at 10 V gate-source voltage and 25 °C junction temperature. It offers fast switching with a turn-on time of 2.5 ns and turn-off time of 11 ns. The gate-source threshold voltage ranges from 1 V to 2.75 V across temperature. The device meets the IEC 60134 Absolute Maximum Rating System and is not automotive qualified.
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOSFET technology.
Features and benefits
Applications
MOSFET N-Channel 60V 0.3A TO236AB
N-Channel 60V 300mA (Ta) 830mW (Ta) Surface Mount TO-236AB
N-Channel 60V 300mA (Ta) 830mW (Ta) Surface Mount TO-236AB
N-Channel 60V 300mA (Ta) 830mW (Ta) Surface Mount TO-236AB
MOSFET N-CH 60V 0.3A 3-Pin SOT-23 Product overview: 2N7002,215 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 0.3A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 0.3A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-2N7002,215 can be used for catalog matching and distributor lookup.
MOSFET N-CH 60V 300MA TO236AB
MOSFET N-CH 60V 300MA TO236AB
60V 300mA 5Ω@10V,500mA 830mW 2.5V@250uA N Channel SOT-23 MOSFETs ROHS
MOSFET, N-CH, 60V, 0.3A, 0.83W, TO-236AB; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:300mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
MOSFET, N-CH, 60V, 0.3A, 0.83W, TO-236AB; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:300mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
| Nexperia B.V. | RS Components, Ltd. | RS Components, Ltd. | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2N7002,215 | 4367379 | 4367379P | 1727-2N7002,215CT-ND | 278-2N7002,215 | 2N7002,215 | 2N7002,215 | 2N7002,215 | 11N8527 |
| Product Name | 60 V, 300 mA N-channel Trench MOSFET | MOSFETs | MOSFETs | Single FETs, MOSFETs | 60V 0.3A SOT-23 MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | Mosfet, N-Ch, 60V, 0.3A, 0.83W, To-236Ab; Channel Type Nexperia |
| MOSFET Operating Mode | Enhancement | Enhancement | |||||||
| Package Type | SOT23; SOT23 SOT23 | SOT23; Sot-23 (to-236ab) | SOT23; SOT-23 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23 | TO-3 | ||
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| Number of units in IC | 1 | ||||||||
| TJ | -65 C (-85 F) | -65 to 150 C (-85 to 302 F) | -65 to 150 C (-85 to 302 F) |
