Nexperia B.V. 60 V, 1 A PNP/PNP low VCEsat transistor PBSS5160DS-QX

Description
PNP/PNP low VCEsat transistor pair in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4160DS-Q Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Dual low power switches (e.g. motors, fans) Automotive applications
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Description
PNP/PNP low VCEsat transistor pair in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4160DS-Q Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Dual low power switches (e.g. motors, fans) Automotive applications
Request a Quote
Datasheet
Datasheet Summary
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PNP/PNP low VCEsat transistor pair in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package, qualified according to AEC-Q101 and recommended for use in automotive applications. Each transistor supports a collector current of up to 1 A and a peak collector current of 2 A, with a collector-emitter saturation resistance of 250 to 330 mΩ under specified conditions. The device operates with a maximum collector-emitter voltage of 60 V and junction temperature up to 150 °C.

Datasheet Summary
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PNP/PNP low VCEsat transistor pair in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package, qualified according to AEC-Q101 and recommended for use in automotive applications. Each transistor supports a collector current of up to 1 A and a peak collector current of 2 A, with a collector-emitter saturation resistance of 250 to 330 mΩ under specified conditions. The device operates with a maximum collector-emitter voltage of 60 V and junction temperature up to 150 °C.

Suppliers

Company
Product
Description
Supplier Links
60 V, 1 A PNP/PNP low VCEsat transistor - PBSS5160DS-QX - Nexperia B.V.
Nijmegen, Netherlands
60 V, 1 A PNP/PNP low VCEsat transistor
PBSS5160DS-QX
60 V, 1 A PNP/PNP low VCEsat transistor PBSS5160DS-QX
PNP/PNP low VCEsat transistor pair in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4160DS-Q Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Dual low power switches (e.g. motors, fans) Automotive applications

PNP/PNP low VCEsat transistor pair in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS4160DS-Q

Features and benefits

  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain (hFE) at high IC
  • High efficiency due to less heat generation
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
  • Qualified according to AEC-Q101 and recommended for use in automotive applications

Applications

  • Dual low power switches (e.g. motors, fans)
  • Automotive applications
Supplier's Site Datasheet
Bipolar Transistor Arrays - 1727-PBSS5160DS-QXTR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
1727-PBSS5160DS-QXTR-ND
Bipolar Transistor Arrays 1727-PBSS5160DS-QXTR-ND
TRANS 2PNP 60V 770MA 6-TSOP

TRANS 2PNP 60V 770MA 6-TSOP

Buy Now Datasheet
Bipolar Transistor Arrays - 1727-PBSS5160DS-QXCT-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
1727-PBSS5160DS-QXCT-ND
Bipolar Transistor Arrays 1727-PBSS5160DS-QXCT-ND
TRANS 2PNP 60V 770MA 6-TSOP

TRANS 2PNP 60V 770MA 6-TSOP

Buy Now Datasheet
Bipolar Transistor Arrays - 1727-PBSS5160DS-QXDKR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
1727-PBSS5160DS-QXDKR-ND
Bipolar Transistor Arrays 1727-PBSS5160DS-QXDKR-ND
TRANS 2PNP 60V 770MA 6-TSOP

TRANS 2PNP 60V 770MA 6-TSOP

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. DigiKey
Product Category Transistors Transistors
Product Number PBSS5160DS-QX 1727-PBSS5160DS-QXTR-ND
Product Name 60 V, 1 A PNP/PNP low VCEsat transistor Bipolar Transistor Arrays
Package Type SOT457 SOT457 SC-74, SOT-457
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