Nexperia B.V. 60 V, 2 A NPN/NPN low VCEsat transistor PBSS4260PAN-QX

Description
NPN/NPN low VCEsat transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4260PANP-Q PNP/PNP complement: PBSS5260PAP-Q Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements High efficiency due to less heat generation Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Load switch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
  • 60 V, 2 A NPN/NPN low VCEsat transistor - PBSS4260PAN-QX - Nexperia B.V.
    Nexperia B.V.
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Description
NPN/NPN low VCEsat transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4260PANP-Q PNP/PNP complement: PBSS5260PAP-Q Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements High efficiency due to less heat generation Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Load switch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
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Datasheet
Datasheet Summary
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60 V, 2 A NPN/NPN low VCEsat transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package measuring 2 mm x 2 mm x 0.65 mm. It has a peak collector current capability of 3 A, a collector-emitter saturation resistance of 165 mΩ at 1 A collector current and 100 mA base current, and is qualified to AEC-Q101 for automotive applications.

Datasheet Summary
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60 V, 2 A NPN/NPN low VCEsat transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package measuring 2 mm x 2 mm x 0.65 mm. It has a peak collector current capability of 3 A, a collector-emitter saturation resistance of 165 mΩ at 1 A collector current and 100 mA base current, and is qualified to AEC-Q101 for automotive applications.

Suppliers

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60 V, 2 A NPN/NPN low VCEsat transistor - PBSS4260PAN-QX - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
60 V, 2 A NPN/NPN low VCEsat transistor
PBSS4260PAN-QX
60 V, 2 A NPN/NPN low VCEsat transistor PBSS4260PAN-QX
NPN/NPN low VCEsat transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4260PANP-Q PNP/PNP complement: PBSS5260PAP-Q Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements High efficiency due to less heat generation Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Load switch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)

NPN/NPN low VCEsat transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

NPN/PNP complement: PBSS4260PANP-Q

PNP/PNP complement: PBSS5260PAP-Q

Features and benefits

  • Very low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain hFE at high IC
  • Reduced Printed-Circuit Board (PCB) requirements
  • High efficiency due to less heat generation
  • Qualified according to AEC-Q101 and recommended for use in automotive applications

Applications

  • Load switch
  • Battery-driven devices
  • Power management
  • Charging circuits
  • Power switches (e.g. motors, fans)
Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V.
Product Category Transistors
Product Number PBSS4260PAN-QX
Product Name 60 V, 2 A NPN/NPN low VCEsat transistor
Package Type SOT1118 SOT1118
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