NPN transistor in a small SOT23 surface-mounted plastic package measuring 2.9 mm x 1.3 mm x 1 mm, designed for power management and switching applications with a 20 V collector-emitter voltage rating and 1 A continuous collector current capability. It features a low collector-emitter saturation voltage and resistance, with a peak collector current of 3 A for pulsed operation. The device is qualified to AEC-Q101 and intended for automotive use, with a maximum junction temperature of 150 °C and total power dissipation up to 480 mW when mounted on a 1 cm² collector pad.
NPN transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package providing ultra low VCEsat and RCEsat parameters.
PNP complement: PBSS5120T-Q
Features and benefits
Applications
PBSS4120T-Q/SOT23/TO
PBSS4120T-Q/SOT23/TO
PBSS4120T-Q/SOT23/TO
| Nexperia B.V. | DigiKey | |
|---|---|---|
| Product Category | Transistors | Transistors |
| Product Number | PBSS4120T-QR | 1727-PBSS4120T-QRCT-ND |
| Product Name | 20 V; 1 A NPN low VCEsat transistor | Single Bipolar Transistors |
| Package Type | SOT23; SOT23 SOT23 | SOT23; TO-236-3, SC-59, SOT-23-3 |
