NPN low VCEsattransistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS4032PZ-Q
Features and benefits
Low collector-emitter saturation voltage VCEsat
Optimized switching time
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High energy efficiency due to less heat generation
Qualified according to AEC-Q101 and recommended for use in automotive applications
Applications
DC-to-DC conversion
Battery-driven devices
Power management
Charging circuits
NPN low VCEsattransistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS4032PZ-Q
Features and benefits
- Low collector-emitter saturation voltage VCEsat
- Optimized switching time
- High collector current capability IC and ICM
- High collector current gain (hFE) at high IC
- High energy efficiency due to less heat generation
- Qualified according to AEC-Q101 and recommended for use in automotive applications
Applications
- DC-to-DC conversion
- Battery-driven devices
- Power management
- Charging circuits
