NPN low VCEsat transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS4032PX
Features and benefits
Very low collector-emitter saturation voltage VCEsat
Optimized switching time
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High energy efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
Applications
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
NPN low VCEsat transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS4032PX
Features and benefits
- Very low collector-emitter saturation voltage VCEsat
- Optimized switching time
- High collector current capability IC and ICM
- High collector current gain (hFE) at high IC
- High energy efficiency due to less heat generation
- Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
Applications
- Battery-driven devices
- Power management
- Charging circuits
- Power switches (e.g. motors, fans)
