Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package, 2.1 mm x 1.25 mm x 0.95 mm, using Trench MOSFET technology. Each transistor has a drain-source voltage rating of 60 V, a continuous drain current of 320 mA at 25 °C, and a drain-source on-state resistance of up to 1.6 Ω at 10 V gate-source voltage. The device is AEC-Q101 qualified and features logic-level compatibility and fast switching.
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
MOSFET 2N-CH 60V 0.32A 6TSSOP
MOSFET 2N-CH 60V 0.32A 6TSSOP
Mosfet Array 2 N-Channel (Dual) 60V 320mA (Ta) 280mW Surface Mount 6-TSSOP
MOSFET 2N-CH 60V 0.32A 6TSSOP
| Nexperia B.V. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2N7002PSZ | 1727-2N7002PSZDKR-ND | 2N7002PSZ | 2N7002PSZ |
| Product Name | 60 V, 320 mA dual N-channel Trench MOSFET | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| MOSFET Operating Mode | Enhancement | |||
| V(BR)DSS | 60 volts | |||
| IDSS | 320000 milliamps | |||
| VGS(off) | 20 volts | |||
| PD | 280 milliwatts |
