Nexperia B.V. 40 V, 600 mA PNP PB RET; R1 = 2.2 kΩ, R2 = 10 kΩ PBRP123YT-QR

Description
PNP low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBRN123YT-Q Features and benefits 600 mA output current capability Low collector-emitter saturation voltage VCEsat High current gain hFE Reduces component count Built-in bias resistors Reduces pick and place costs Simplifies circuit design ± 10 % resistor ratio tolerance Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Digital application in automotive and industrial segments Switching loads Medium current peripheral driver
  • 40 V, 600 mA PNP PB RET; R1 = 2.2 kΩ, R2 = 10 kΩ - PBRP123YT-QR - Nexperia B.V.
    Nexperia B.V.
  • Single, Pre-Biased Bipolar Transistors - 1727-PBRP123YT-QRTR-ND - DigiKey
    DigiKey
Request a Quote Datasheet
Description
PNP low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBRN123YT-Q Features and benefits 600 mA output current capability Low collector-emitter saturation voltage VCEsat High current gain hFE Reduces component count Built-in bias resistors Reduces pick and place costs Simplifies circuit design ± 10 % resistor ratio tolerance Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Digital application in automotive and industrial segments Switching loads Medium current peripheral driver
Request a Quote Datasheet

Suppliers

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Supplier Links
40 V, 600 mA PNP PB RET; R1 = 2.2 kΩ, R2 = 10 kΩ - PBRP123YT-QR - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
40 V, 600 mA PNP PB RET; R1 = 2.2 kΩ, R2 = 10 kΩ
PBRP123YT-QR
40 V, 600 mA PNP PB RET; R1 = 2.2 kΩ, R2 = 10 kΩ PBRP123YT-QR
PNP low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBRN123YT-Q Features and benefits 600 mA output current capability Low collector-emitter saturation voltage VCEsat High current gain hFE Reduces component count Built-in bias resistors Reduces pick and place costs Simplifies circuit design ± 10 % resistor ratio tolerance Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Digital application in automotive and industrial segments Switching loads Medium current peripheral driver

PNP low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package.

NPN complement: PBRN123YT-Q

Features and benefits

  • 600 mA output current capability
  • Low collector-emitter saturation voltage VCEsat
  • High current gain hFE
  • Reduces component count
  • Built-in bias resistors
  • Reduces pick and place costs
  • Simplifies circuit design
  • ± 10 % resistor ratio tolerance
  • Qualified according to AEC-Q101 and recommended for use in automotive applications

Applications

  • Digital application in automotive and industrial segments
  • Switching loads
  • Medium current peripheral driver
Supplier's Site Datasheet
Single, Pre-Biased Bipolar Transistors - 1727-PBRP123YT-QRTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
1727-PBRP123YT-QRTR-ND
Single, Pre-Biased Bipolar Transistors 1727-PBRP123YT-QRTR-ND
TRANS PREBIAS PNP 40V TO236AB

TRANS PREBIAS PNP 40V TO236AB

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. DigiKey
Product Category Transistors Transistors
Product Number PBRP123YT-QR 1727-PBRP123YT-QRTR-ND
Product Name 40 V, 600 mA PNP PB RET; R1 = 2.2 kΩ, R2 = 10 kΩ Single, Pre-Biased Bipolar Transistors
Package Type SOT23; SOT23 SOT23 SOT23; TO-236-3, SC-59, SOT-23-3
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