Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
Mosfet Array 2 P-Channel (Dual) 50V 170mA 500mW Surface Mount SOT-666
Mosfet Array 2 P-Channel (Dual) 50V 170mA 500mW Surface Mount SOT-666
Mosfet Array 2 P-Channel (Dual) 50V 170mA 500mW Surface Mount SOT-666
BSS84AKV - 50 V, 170 mA dual P-channel Trench MOSFET SOT 6-Pin Product overview: BSS84AKV,115 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, Dual, 50 V, 170 mA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 50 V, 170 mA, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-BSS84AKV,115 can be used for catalog matching and distributor lookup.
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1024540-BSS84AKV,115
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-666
Maximum Power Dissipation: 500mW
Drain-Source Breakdown Voltage: 50V
Continuous Drain Current at 25°C: 170mA
Gate-Source Threshold Voltage: 2.1V @ 250μA
Max Gate Charge: 0.35nC @ 5V
Max Input Capacitance: 36pF @ 25V
Maximum Rds On at Id,Vgs: 7.5 Ohm @ 100mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Sufficient
MOSFET 2P-CH 50V 170MA SOT666
MOSFET 2P-CH 50V 0.17A SOT666
MOSFET, DUAL P-CH, 50V, 0.17A, SOT-666 ROHS COMPLIANT: YES
| Nexperia B.V. | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BSS84AKV,115 | 1727-1265-2-ND | 289-BSS84AKV,115 | 1024540-BSS84AKV,115 | BSS84AKV,115 | BSS84AKV,115 | 23AJ5963 |
| Product Name | 50 V, 170 mA dual P-channel Trench MOSFET | FET, MOSFET Arrays | P-Channel Dual 50 V 170 mA MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSS84AKV,115 | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Dual P-Ch, 50V, 0.17A, Sot-666 Rohs Compliant Nexperia |
| Polarity | P-Channel | P-Channel | P-Channel; 2 P-Channel (Dual) | ||||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | -50 volts | 50 volts | 50 volts | ||||
| IDSS | -170 milliamps | 170 milliamps | |||||
| VGS(off) | -1.6 volts |
