Nexperia B.V. 20 V, 2 A PNP medium power transistors BCP69-25-QX

Description
PNP medium power transistors in a SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. Features and benefits High current Three current gain selections High power dissipation capability Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Linear voltage regulators High-side switches Battery-driven devices Power management MOSFET drivers Amplifiers
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Description
PNP medium power transistors in a SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. Features and benefits High current Three current gain selections High power dissipation capability Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Linear voltage regulators High-side switches Battery-driven devices Power management MOSFET drivers Amplifiers
Request a Quote
Datasheet
Datasheet Summary
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PNP medium power transistors in a SOT223 (SC-73) surface-mounted plastic package, measuring 6.5 mm x 3.5 mm x 1.65 mm, with a collector-emitter voltage rating of -20 V and a continuous collector current of -2 A. The BCP69-25-Q variant offers a DC current gain (hFE) of 160 to 375 at VCE = -1 V and IC = -500 mA, and is qualified to AEC-Q101 for automotive applications. Power dissipation up to 1.35 W is supported with a 6 cm² collector pad on an FR4 PCB. The device has a junction temperature range of -55 °C to 150 °C and storage temperature range of -65 °C to 150 °C.

Datasheet Summary
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PNP medium power transistors in a SOT223 (SC-73) surface-mounted plastic package, measuring 6.5 mm x 3.5 mm x 1.65 mm, with a collector-emitter voltage rating of -20 V and a continuous collector current of -2 A. The BCP69-25-Q variant offers a DC current gain (hFE) of 160 to 375 at VCE = -1 V and IC = -500 mA, and is qualified to AEC-Q101 for automotive applications. Power dissipation up to 1.35 W is supported with a 6 cm² collector pad on an FR4 PCB. The device has a junction temperature range of -55 °C to 150 °C and storage temperature range of -65 °C to 150 °C.

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20 V, 2 A PNP medium power transistors - BCP69-25-QX - Nexperia B.V.
Nijmegen, Netherlands
20 V, 2 A PNP medium power transistors
BCP69-25-QX
20 V, 2 A PNP medium power transistors BCP69-25-QX
PNP medium power transistors in a SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. Features and benefits High current Three current gain selections High power dissipation capability Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Linear voltage regulators High-side switches Battery-driven devices Power management MOSFET drivers Amplifiers

PNP medium power transistors in a SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

Features and benefits

  • High current
  • Three current gain selections
  • High power dissipation capability
  • Qualified according to AEC-Q101 and recommended for use in automotive applications

Applications

  • Linear voltage regulators
  • High-side switches
  • Battery-driven devices
  • Power management
  • MOSFET drivers
  • Amplifiers
Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V.
Product Category Transistors
Product Number BCP69-25-QX
Product Name 20 V, 2 A PNP medium power transistors
Package Type SOT223; SOT223 SOT223
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