Nexperia B.V. 65 V, 100 mA PNP/PNP general-purpose double transistor BC856SH-QF

Description
PNP/PNP general-purpose double transistor in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: BC846SH-Q Features and benefits Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces number of components and board space No mutual interference between the transistors High-temperature applications up to 175 °C Qualified according to AEC-Q101 and recommended for use in automotive applications Applications General-purpose switching and amplification
  • 65 V, 100 mA PNP/PNP general-purpose double transistor - BC856SH-QF - Nexperia B.V.
    Nexperia B.V.
  • Bipolar Transistor Arrays - 1727-BC856SH-QF-ND - DigiKey
    DigiKey
  • BC856SH-QF - Rochester Electronics
    Rochester Electronics
Request a Quote Datasheet
Description
PNP/PNP general-purpose double transistor in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: BC846SH-Q Features and benefits Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces number of components and board space No mutual interference between the transistors High-temperature applications up to 175 °C Qualified according to AEC-Q101 and recommended for use in automotive applications Applications General-purpose switching and amplification
Request a Quote Datasheet

Suppliers

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65 V, 100 mA PNP/PNP general-purpose double transistor - BC856SH-QF - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
65 V, 100 mA PNP/PNP general-purpose double transistor
BC856SH-QF
65 V, 100 mA PNP/PNP general-purpose double transistor BC856SH-QF
PNP/PNP general-purpose double transistor in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: BC846SH-Q Features and benefits Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces number of components and board space No mutual interference between the transistors High-temperature applications up to 175 °C Qualified according to AEC-Q101 and recommended for use in automotive applications Applications General-purpose switching and amplification

PNP/PNP general-purpose double transistor in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.

NPN/NPN complement: BC846SH-Q

Features and benefits

  • Low collector capacitance
  • Low collector-emitter saturation voltage
  • Closely matched current gain
  • Reduces number of components and board space
  • No mutual interference between the transistors
  • High-temperature applications up to 175 °C
  • Qualified according to AEC-Q101 and recommended for use in automotive applications

Applications

  • General-purpose switching and amplification
Supplier's Site Datasheet
Bipolar Transistor Arrays - 1727-BC856SH-QF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
1727-BC856SH-QF-ND
Bipolar Transistor Arrays 1727-BC856SH-QF-ND
TRANS 2PNP 65V 100MA 6-TSSOP

TRANS 2PNP 65V 100MA 6-TSSOP

Buy Now Datasheet
- BC856SH-QF - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
BC856SH-QF
BC856SH-QF
65 V, 100 mA PNP/PNP general-purpose double transistor

65 V, 100 mA PNP/PNP general-purpose double transistor

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. DigiKey Rochester Electronics
Product Category Bipolar RF Transistors Transistors RF Transistors
Product Number BC856SH-QF 1727-BC856SH-QF-ND BC856SH-QF
Product Name 65 V, 100 mA PNP/PNP general-purpose double transistor Bipolar Transistor Arrays
Package Type SOT363 SOT363 6-TSSOP, SC-88, SOT-363 SOT363
IC(max) -100 milliamps
VCEO -65 volts
PD 270 milliwatts
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