Nexperia B.V. 20 V, 3 A NPN low VCEsat (BISS) transistor 2PD2150,115

Description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT89 (SC-62/TO-243) flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: 2PB1424. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors AEC-Q101 qualified Applications DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Power switches (e.g. motors, fans) Thin Film Transistor (TFT) backlight inverter
  • 20 V, 3 A NPN low VCEsat (BISS) transistor - 2PD2150,115 - Nexperia B.V.
    Nexperia B.V.
  • Single Bipolar Transistors - 1727-2PD2150,115TR-ND - DigiKey
    DigiKey
  • Single Bipolar Transistors - 1727-2PD2150,115CT-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Single - 2PD2150,115 - 1004112-2PD2150,115 - Win Source Electronics
    Win Source Electronics
  • 2PD2150,115 - Rochester Electronics
    Rochester Electronics
  • Transistor, Bipolar Rohs Compliant Nexperia - 30AK0375 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT89 (SC-62/TO-243) flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: 2PB1424. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors AEC-Q101 qualified Applications DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Power switches (e.g. motors, fans) Thin Film Transistor (TFT) backlight inverter
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
20 V, 3 A NPN low VCEsat (BISS) transistor - 2PD2150,115 - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
20 V, 3 A NPN low VCEsat (BISS) transistor
2PD2150,115
20 V, 3 A NPN low VCEsat (BISS) transistor 2PD2150,115
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT89 (SC-62/TO-243) flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: 2PB1424. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors AEC-Q101 qualified Applications DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Power switches (e.g. motors, fans) Thin Film Transistor (TFT) backlight inverter

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT89 (SC-62/TO-243) flat lead Surface-Mounted Device (SMD) plastic package.

PNP complement: 2PB1424.

Features and benefits

  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain (hFE) at high IC
  • High efficiency due to less heat generation
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
  • AEC-Q101 qualified

Applications

  • DC-to-DC conversion
  • MOSFET gate driving
  • Motor control
  • Charging circuits
  • Power switches (e.g. motors, fans)
  • Thin Film Transistor (TFT) backlight inverter
Supplier's Site Datasheet
Single Bipolar Transistors - 1727-2PD2150,115TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-2PD2150,115TR-ND
Single Bipolar Transistors 1727-2PD2150,115TR-ND
Bipolar (BJT) Transistor NPN 20V 3A 220MHz 2W Surface Mount SOT-89

Bipolar (BJT) Transistor NPN 20V 3A 220MHz 2W Surface Mount SOT-89

Buy Now Datasheet
Single Bipolar Transistors - 1727-2PD2150,115CT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-2PD2150,115CT-ND
Single Bipolar Transistors 1727-2PD2150,115CT-ND
Bipolar (BJT) Transistor NPN 20V 3A 220MHz 2W Surface Mount SOT-89

Bipolar (BJT) Transistor NPN 20V 3A 220MHz 2W Surface Mount SOT-89

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - 2PD2150,115 - 1004112-2PD2150,115 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2PD2150,115
1004112-2PD2150,115
TRANSISTORS - Transistors (BJT) - Single - 2PD2150,115 1004112-2PD2150,115
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1004112-2PD2150,115 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 220MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-89-3 Maximum Current Collector: 3A VCEO Maximum Collector-Emitter Breakdown Voltage: 20V Max Vce (sat): 500mV @ 100mA, 2A Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 180 @ 100mA, 2V Maximum Power Dissipation: 2W Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1004112-2PD2150,115
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 220MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-89-3
Maximum Current Collector: 3A
VCEO Maximum Collector-Emitter Breakdown Voltage: 20V
Max Vce (sat): 500mV @ 100mA, 2A
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 180 @ 100mA, 2V
Maximum Power Dissipation: 2W
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
- 2PD2150,115 - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
2PD2150,115
2PD2150,115
Power Bipolar Transistor, 1A I(C), 1-Element, NPN

Power Bipolar Transistor, 1A I(C), 1-Element, NPN

Supplier's Site Datasheet
Transistor, Bipolar Rohs Compliant Nexperia - 30AK0375 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Transistor, Bipolar Rohs Compliant Nexperia
30AK0375
Transistor, Bipolar Rohs Compliant Nexperia 30AK0375
TRANSISTOR, BIPOLAR ROHS COMPLIANT: YES

TRANSISTOR, BIPOLAR ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey Win Source Electronics Rochester Electronics Newark, An Avnet Company
Product Category Transistors Transistors Transistors Power MOSFET Bipolar RF Transistors
Product Number 2PD2150,115 1727-2PD2150,115TR-ND 1004112-2PD2150,115 2PD2150,115 30AK0375
Product Name 20 V, 3 A NPN low VCEsat (BISS) transistor Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - 2PD2150,115 Transistor, Bipolar Rohs Compliant Nexperia
Package Type SOT89; SOT89 SOT89 SOT89; TO-243AA SOT3; SOT89; SOT-89-3 SOT89 TO-3
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