Nexperia B.V. 65 V, 100 mA PNP/PNP general-purpose transistor BC856S-QF

Description
PNP/PNP general-purpose transistor pair in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. Features and benefits Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces number of components and board space No mutual interference between the transistors Qualified according to AEC-Q101 and recommended for use in automotive applications Applications General-purpose switching and amplification
Request a Quote
Description
PNP/PNP general-purpose transistor pair in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. Features and benefits Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces number of components and board space No mutual interference between the transistors Qualified according to AEC-Q101 and recommended for use in automotive applications Applications General-purpose switching and amplification
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

PNP/PNP general-purpose transistor pair in a TSSOP6 (SOT363-3) surface-mounted package, rated for a collector-emitter voltage of -65 V and a collector current of -100 mA per transistor. The device features low collector capacitance, low collector-emitter saturation voltage, and closely matched current gain with a minimum hFE of 110 at V_CE = -5 V and I_C = -2 mA. It is qualified to AEC-Q101 for automotive applications and operates with a junction temperature up to 150 °C. Total power dissipation is 300 mW at 25 °C ambient with a standard footprint.

Datasheet Summary
Powered by GS/AI

PNP/PNP general-purpose transistor pair in a TSSOP6 (SOT363-3) surface-mounted package, rated for a collector-emitter voltage of -65 V and a collector current of -100 mA per transistor. The device features low collector capacitance, low collector-emitter saturation voltage, and closely matched current gain with a minimum hFE of 110 at V_CE = -5 V and I_C = -2 mA. It is qualified to AEC-Q101 for automotive applications and operates with a junction temperature up to 150 °C. Total power dissipation is 300 mW at 25 °C ambient with a standard footprint.

Suppliers

Company
Product
Description
Supplier Links
65 V, 100 mA PNP/PNP general-purpose transistor - BC856S-QF - Nexperia B.V.
Nijmegen, Netherlands
65 V, 100 mA PNP/PNP general-purpose transistor
BC856S-QF
65 V, 100 mA PNP/PNP general-purpose transistor BC856S-QF
PNP/PNP general-purpose transistor pair in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. Features and benefits Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces number of components and board space No mutual interference between the transistors Qualified according to AEC-Q101 and recommended for use in automotive applications Applications General-purpose switching and amplification

PNP/PNP general-purpose transistor pair in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package.

Features and benefits

  • Low collector capacitance
  • Low collector-emitter saturation voltage
  • Closely matched current gain
  • Reduces number of components and board space
  • No mutual interference between the transistors
  • Qualified according to AEC-Q101 and recommended for use in automotive applications

Applications

  • General-purpose switching and amplification
Supplier's Site Datasheet
Bipolar Transistor Arrays - 1727-BC856S-QFTR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
1727-BC856S-QFTR-ND
Bipolar Transistor Arrays 1727-BC856S-QFTR-ND
TRANS 2PNP 65V 100MA 6-TSSOP

TRANS 2PNP 65V 100MA 6-TSSOP

Buy Now Datasheet
Bipolar Transistor Arrays - 1727-BC856S-QFCT-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
1727-BC856S-QFCT-ND
Bipolar Transistor Arrays 1727-BC856S-QFCT-ND
TRANS 2PNP 65V 100MA 6-TSSOP

TRANS 2PNP 65V 100MA 6-TSSOP

Buy Now Datasheet
Bipolar Transistor Arrays - 1727-BC856S-QFDKR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
1727-BC856S-QFDKR-ND
Bipolar Transistor Arrays 1727-BC856S-QFDKR-ND
TRANS 2PNP 65V 100MA 6-TSSOP

TRANS 2PNP 65V 100MA 6-TSSOP

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. DigiKey
Product Category Bipolar RF Transistors Transistors
Product Number BC856S-QF 1727-BC856S-QFTR-ND
Product Name 65 V, 100 mA PNP/PNP general-purpose transistor Bipolar Transistor Arrays
Package Type SOT363-3 SOT363-3 6-TSSOP, SC-88, SOT-363
IC(max) -100 milliamps
VCEO -65 volts
PD 220 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

45 V, 1 A NPN medium power transistors - BC54-16PA,115 - Nexperia B.V.
Specs
Package Type SOT1061 SOT1061
View Details
5 suppliers
Single Bipolar Transistors - BC817-25/SNR-ND - DigiKey
Specs
Polarity NPN
Package Type SOT23; TO-236-3, SC-59, SOT-23-3
View Details
3 suppliers
80 V, 500 mA PNP general-purpose transistors - BC806-25VL - Nexperia B.V.
Specs
Transistor Grade / Operating Range Automotive
Package Type SOT23; SOT23 SOT23
IC(max) -500 milliamps
View Details
5 suppliers
Single Bipolar Transistors - BC817-25/SNR-ND - DigiKey
Specs
Polarity NPN
Package Type SOT23; TO-236-3, SC-59, SOT-23-3
View Details
3 suppliers