PNP medium power transistors in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package measuring 2 mm x 2 mm x 0.65 mm with an exposed heatsink for enhanced thermal and electrical conductivity. The device is qualified to AEC-Q101 and rated for a maximum collector-emitter voltage of -45 V, collector current of -1 A, and peak collector current of -2 A. Power dissipation reaches up to 1.65 W with a 4-layer PCB and 1 cm² collector pad. The BC51-16PA-Q variant has a DC current gain range of 100 to 250 at -2 V collector-emitter voltage and -150 mA collector current.
PNP medium power transistors in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package.
Features and benefits
Applications
POWER BJTS IN DFN
| Nexperia B.V. | DigiKey | |
|---|---|---|
| Product Category | Transistors | Transistors |
| Product Number | BC51-16PA-QX | 1727-BC51-16PA-QXTR-ND |
| Product Name | 45 V, 1 A PNP medium power transistors | Single Bipolar Transistors |
| Package Type | SOT1061 SOT1061 |
