California Eastern Laboratories - CEL RF FETs, MOSFETs NE3503M04-T2B-A

The NE3503M04 is a silicon n-channel heterojunction field effect transistor designed as a low-noise amplifier for microwave communication systems, including DBS LNB applications. It is packaged in a flat-lead 4-pin thin-type super minimold (M04) with a gate width of 160 μm. The device operates with a drain-source voltage up to 3 V and a drain current of up to 15 mA. At 12 GHz, it exhibits a typical noise figure of 0.45 dB and an associated gain of 12.0 dB under VDS = 2 V and ID = 10 mA conditions. The maximum total power dissipation is 125 mW, and the channel temperature rating is +125 °C. The part is RoHS-compliant and supplied in 15 kpcs/reel packaging for the NE3503M04-T2B variant.