Microsemi Corp. TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT66M60B2 APT66M60B2

Manufacturer: Microsemi Corporation Win Source Part Number: 051481-APT66M60B2 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1135W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: T-MAX [B2] Dimension: TO-247-3 Variant Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 70A (Tc) Gate-Source Threshold Voltage: 5V @ 2.5mA Max Gate Charge: 330nC @ 10V Max Input Capacitance: 13190pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 100 mOhm @ 33A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited