Microsemi Corp. TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT29F100L APT29F100L

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1146696-APT29F100L Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-264-3, TO-264AA Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Family Name: APT29F100L Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.microsemi.com Manufacturer Package: TO-264 Channel Type Type: N Drain Source Voltage: 1000V Vgs(th) (Maximum) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Maximum) @ Vgs: 260nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 8500pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 1040W (Tc) Rds On (Maximum) @ Id, Vgs: 460 mOhm @ 16A, 10V Alternative Parts (Cross-Reference): IXFK30N100Q2SN; IXFK24N100Q3; IXFX24N100Q3; Introduction Date: January 05, 2006 ECCN: EAR99 Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited Quantity per package: 1
Request a Quote Datasheet
Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1146696-APT29F100L Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-264-3, TO-264AA Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Family Name: APT29F100L Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.microsemi.com Manufacturer Package: TO-264 Channel Type Type: N Drain Source Voltage: 1000V Vgs(th) (Maximum) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Maximum) @ Vgs: 260nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 8500pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 1040W (Tc) Rds On (Maximum) @ Id, Vgs: 460 mOhm @ 16A, 10V Alternative Parts (Cross-Reference): IXFK30N100Q2SN; IXFK24N100Q3; IXFX24N100Q3; Introduction Date: January 05, 2006 ECCN: EAR99 Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited Quantity per package: 1
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT29F100L - 1146696-APT29F100L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT29F100L
1146696-APT29F100L
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT29F100L 1146696-APT29F100L
Manufacturer: Microsemi Corporation Win Source Part Number: 1146696-APT29F100L Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-264-3, TO-264AA Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Family Name: APT29F100L Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.microsemi.com Manufacturer Package: TO-264 Channel Type Type: N Drain Source Voltage: 1000V Vgs(th) (Maximum) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Maximum) @ Vgs: 260nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 8500pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 1040W (Tc) Rds On (Maximum) @ Id, Vgs: 460 mOhm @ 16A, 10V Alternative Parts (Cross-Reference): IXFK30N100Q2SN; IXFK24N100Q3; IXFX24N100Q3; Introduction Date: January 05, 2006 ECCN: EAR99 Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited Quantity per package: 1

Manufacturer: Microsemi Corporation
Win Source Part Number: 1146696-APT29F100L
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-264-3, TO-264AA
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Family Name: APT29F100L
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.microsemi.com
Manufacturer Package: TO-264
Channel Type Type: N
Drain Source Voltage: 1000V
Vgs(th) (Maximum) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Maximum) @ Vgs: 260nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 8500pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 1040W (Tc)
Rds On (Maximum) @ Id, Vgs: 460 mOhm @ 16A, 10V
Alternative Parts (Cross-Reference): IXFK30N100Q2SN; IXFK24N100Q3; IXFX24N100Q3;
Introduction Date: January 05, 2006
ECCN: EAR99
Estimated EOL Date: 2024
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited
Quantity per package: 1

Buy Now Datasheet

Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 1146696-APT29F100L
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT29F100L
Package Type SOT3
Unlock Full Specs
to access all available technical data

Similar Products

Transistor - 55082821 - Radwell International
Fuji Electric Corp. of America
View Details
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - UF3C120150B7S - Shenzhen Shengyu Electronics Technology Limited
Specs
Transistor Type MOSFET
Package Type TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
View Details
CSD18509Q5B 40V, N-Channel NexFET(TM) Power MOSFET, CSD18509Q5B - CSD18509Q5B - Texas Instruments
Specs
Transistor Type Power-MOSFET
Polarity N-Channel
Package Type SON5x6
View Details
6 suppliers
1300A IGBT MODULE FOR ONE PHASE - SK-H1-QOUT-D1K3 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
Specs
Transistor Type IGBT
View Details