Microsemi Corp. MOSFET APT22F80S

Description
MOSFET FG, FREDFET, 800V, TO-268
Description
MOSFET FG, FREDFET, 800V, TO-268
Datasheet
Datasheet Summary
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The APT22F80S is an 800V N-channel FREDFET power MOSFET designed for high-efficiency switching applications such as ZVS phase-shifted bridges, PFC converters, and buck/boost topologies. It is housed in a TO-247 package with a weight of 6.2 g and a mounting torque of 1.1 N·m. The device has a maximum continuous drain current of 23 A at 25°C and 15 A at 100°C, with a drain-source on-resistance of 0.43 Ω max at 10 V gate voltage and 12 A drain current. The body diode exhibits a reverse recovery time of ≤260 ns at 25°C and 490 ns at 125°C, with a reverse recovery charge of 2.71 μC at 125°C and di/dt of 100 A/μs. It is rated for 975 mJ single-pulse avalanche energy and can operate from -55°C to 150°C junction temperature. The part is RoHS compliant.

Datasheet Summary
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The APT22F80S is an 800V N-channel FREDFET power MOSFET designed for high-efficiency switching applications such as ZVS phase-shifted bridges, PFC converters, and buck/boost topologies. It is housed in a TO-247 package with a weight of 6.2 g and a mounting torque of 1.1 N·m. The device has a maximum continuous drain current of 23 A at 25°C and 15 A at 100°C, with a drain-source on-resistance of 0.43 Ω max at 10 V gate voltage and 12 A drain current. The body diode exhibits a reverse recovery time of ≤260 ns at 25°C and 490 ns at 125°C, with a reverse recovery charge of 2.71 μC at 125°C and di/dt of 100 A/μs. It is rated for 975 mJ single-pulse avalanche energy and can operate from -55°C to 150°C junction temperature. The part is RoHS compliant.

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Sheung Wan, Hong Kong
MOSFET FG, FREDFET, 800V, TO-268

MOSFET FG, FREDFET, 800V, TO-268

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number APT22F80S
Product Name MOSFET
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