Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK1460LS 2SK1460LS

The 2SK1460LS is an N-channel silicon MOSFET designed for ultrahigh-speed switching applications, housed in a TO-220FI(LS) package measuring 10.0 mm × 4.5 mm × 1.2 mm. It has a drain-to-source voltage rating of 900 V, a continuous drain current of 3.5 A, and a pulsed drain current of 7 A. The static drain-to-source on-state resistance ranges from 2.8 Ω to 3.6 Ω at 2 A and 10 V gate drive. Input capacitance is 700 pF, output capacitance is 300 pF, and reverse transfer capacitance is 170 pF at 20 V drain-source voltage and 1 MHz frequency. Switching times are 15 ns turn-on delay, 35 ns rise time, 200 ns turn-off delay, and 65 ns fall time under specified test conditions. The maximum channel temperature is 150°C, and the storage temperature range is -55°C to +150°C. The device has no internal gate-source protection diode.