Microsemi Corp. TRANSISTORS - Transistors (BJT) - Single - 2N3635 2N3635

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 143830-2N3635 Packaging: Bulk Mounting: Through Hole Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 200°C (TJ) Case / Package: TO-5 Maximum Current Collector: 1A VCEO Maximum Collector-Emitter Breakdown Voltage: 140V Max Vce (sat): 600mV @ 5mA, 50mA Collector Cut-off Current(Max): 10μA Typical Gain (hFE) (Min): 100 @ 50mA, 10V Maximum Power Dissipation: 1W Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited Quantity per package: 1
Request a Quote Datasheet
Description
Manufacturer: Microsemi Corporation Win Source Part Number: 143830-2N3635 Packaging: Bulk Mounting: Through Hole Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 200°C (TJ) Case / Package: TO-5 Maximum Current Collector: 1A VCEO Maximum Collector-Emitter Breakdown Voltage: 140V Max Vce (sat): 600mV @ 5mA, 50mA Collector Cut-off Current(Max): 10μA Typical Gain (hFE) (Min): 100 @ 50mA, 10V Maximum Power Dissipation: 1W Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited Quantity per package: 1
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - 2N3635 - 143830-2N3635 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2N3635
143830-2N3635
TRANSISTORS - Transistors (BJT) - Single - 2N3635 143830-2N3635
Manufacturer: Microsemi Corporation Win Source Part Number: 143830-2N3635 Packaging: Bulk Mounting: Through Hole Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 200°C (TJ) Case / Package: TO-5 Maximum Current Collector: 1A VCEO Maximum Collector-Emitter Breakdown Voltage: 140V Max Vce (sat): 600mV @ 5mA, 50mA Collector Cut-off Current(Max): 10μA Typical Gain (hFE) (Min): 100 @ 50mA, 10V Maximum Power Dissipation: 1W Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited Quantity per package: 1

Manufacturer: Microsemi Corporation
Win Source Part Number: 143830-2N3635
Packaging: Bulk
Mounting: Through Hole
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 200°C (TJ)
Case / Package: TO-5
Maximum Current Collector: 1A
VCEO Maximum Collector-Emitter Breakdown Voltage: 140V
Max Vce (sat): 600mV @ 5mA, 50mA
Collector Cut-off Current(Max): 10μA
Typical Gain (hFE) (Min): 100 @ 50mA, 10V
Maximum Power Dissipation: 1W
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited
Quantity per package: 1

Buy Now Datasheet

Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 143830-2N3635
Product Name TRANSISTORS - Transistors (BJT) - Single - 2N3635
Polarity PNP; PNP
Unlock Full Specs
to access all available technical data

Similar Products

Power MOSFETs - SuperFAP-E3 Model: FMI07N90E - Fuji Electric Corp. of America
Fuji Electric Corp. of America
Specs
Transistor Type Power-MOSFET
Package Type T-Pack(L)
Transistor Grade / Operating Range Commercial; Industrial; Automotive
View Details
DC - 20 GHz, 600 um Discrete GaAs pHEMT Die - QPD2060D - Qorvo
Specs
Transistor Type HEMT; PHEMT
Transistor Technology / Material DC - 20 GHz, 600 um Discrete GaAs pHEMT Die
Package Type Die
View Details
2 suppliers
Integrated Circuits (ICs) - PMIC - Motor Drivers, Controllers - 991336-DRV8886PWPR - Win Source Electronics
Specs
Transistor Type Bipolar RF; MOSFET; Power-MOSFET
Package Type SOT3
View Details
920A IGBT MODULE FOR ONE PHASE - SK-H1-QOUT-E920 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
Specs
Transistor Type IGBT
View Details