Microchip Technology, Inc. MOSFET VN2106N3-G P013

The VN2106N3-G is an N-channel enhancement-mode vertical DMOS FET in a TO-92 package, designed for switching and amplification applications requiring low threshold voltage, high input impedance, and fast switching speeds. It has a drain-to-source breakdown voltage of 60 V, a maximum on-state resistance of 6.0 Ω at 5.0 V gate-source voltage, and a continuous drain current of 300 mA. The device operates from -55°C to +150°C and is RoHS compliant. Its input capacitance is 35 to 50 pF, output capacitance is 13 to 25 pF, and reverse transfer capacitance is 4.0 to 5.0 pF at 1.0 MHz. The part meets the RoHS standard for environmental compliance.