Microchip Technology, Inc. MOSFET VN2106N3-G P005

The VN2106N3-G is an N-channel enhancement-mode vertical DMOS FET in a TO-92 package, designed for switching and amplification applications requiring low threshold voltage, high input impedance, and fast switching speeds. It has a drain-to-source breakdown voltage of 60 V, a maximum on-state resistance of 4.0 Ω at 10 V gate-source voltage, and operates from -55°C to +150°C. The device is RoHS compliant and features a positive temperature coefficient, thermal stability, and no secondary breakdown. Its typical input capacitance is 35 pF, with a forward transconductance up to 400 mmho, and a peak drain current of 300 mA continuous or 1.0 A pulsed. The package is TO-92 (N3), with overall dimensions of up to 0.210 in height, 0.205 in width, and 0.610 in length.