CSD17579Q3A 30 V N-Channel NexFET? Power MOSFET 8-VSONP
Manufacturer: Texas Instruments
Win Source Part Number: 1030619-CSD17579Q3AT
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.2W (Ta), 29W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-VSONP (3x3.15)
Dimension: 8-PowerVDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 20A (Ta)
Gate-Source Threshold Voltage: 1.9V @ 250μA
Max Gate Charge: 15nC @ 10V
Max Input Capacitance: 998pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 10.2 mOhm @ 8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Sufficient
N-Channel 30V 20A (Ta) 3.2W (Ta), 29W (Tc) Surface Mount 8-VSONP (3x3.3)
N-Channel 30V 20A (Ta) 3.2W (Ta), 29W (Tc) Surface Mount 8-VSONP (3x3.3)
N-Channel 30V 20A (Ta) 3.2W (Ta), 29W (Tc) Surface Mount 8-VSONP (3x3.3)
MOSFET 30V NCh NexFET Pwr MOSFET
MOSFET N-CH 30V 20A 8VSON
| Texas Instruments | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | CSD17579Q3AT | 1030619-CSD17579Q3AT | 296-38463-1-ND | CSD17579Q3AT | CSD17579Q3AT |
| Product Name | CSD17579Q3A CSD17579Q3A 30 V N-Channel NexFET? Power MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD17579Q3AT | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 30 volts | 30 volts | |||
| rDS(on) | 0.0142 ohms | ||||
| IDSS | 106000 milliamps | ||||
| QG | 5.3 nC |
