Microchip Technology, Inc. MOSFET VN10KN3-P014-G

The VN10KN3-P014-G is an N-channel enhancement-mode vertical DMOS FET in a TO-92 package, rated for a maximum drain-to-source voltage of 60 V and a static drain-to-source on-state resistance of up to 5.0 Ω at 10 V gate-source voltage. It features a low threshold voltage range of 0.8 to 2.5 V, a continuous drain current of 310 mA, and an integral source-drain diode with a forward voltage drop of 0.8 V. The device operates from -55°C to +150°C and is RoHS compliant. Its high input impedance, fast switching speeds, and thermal stability make it suitable for switching and amplifier applications such as motor controls, power supplies, and driver circuits.