The VN0606 is an N-channel enhancement-mode vertical DMOS FET designed for switching and amplification applications requiring low threshold voltage, high input impedance, and fast switching speeds. It is packaged in a TO-92 case with dimensions of 5.08mm to 6.10mm in length, 2.54mm to 4.19mm in width, and 3.81mm to 4.79mm in height. The device has a drain-to-source breakdown voltage of 60V, a maximum continuous drain current of 330mA, and a static drain-to-source on-state resistance of 3.0Ω. It features an integral source-drain diode, a gate threshold voltage range of 0.8V to 2.0V, and excellent thermal stability with a maximum operating temperature of 150°C. The package is lead-free and RoHS compliant. Thermal resistance is 132°C/W.
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | VN0606 |
| Product Name | 60V N-Channel Enhancement-Mode MOSFET |
| Polarity | N-Channel |
