The VN0106 is an N-channel enhancement-mode vertical DMOS FET designed for switching and amplifying applications requiring low threshold voltage, high input impedance, and fast switching speeds. It is packaged in a TO-92 case with dimensions of 5.10mm to 6.10mm in length, 2.79mm to 3.78mm in width, and 2.03mm to 2.67mm in thickness. The device has a drain-to-source breakdown voltage of 60V, a static drain-to-source on-state resistance of 2.5Ω to 5.0Ω, and a continuous drain current rating of 350mA. It features an integral source-drain diode, a gate threshold voltage range of 0.8V to 2.4V, and operates over a temperature range from -55°C to +150°C. The part is RoHS compliant and meets the TO-92 JEDEC package standard.
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | VN0106 |
| Product Name | 60V N-Channel Enhancement-Mode MOSFET |
| Polarity | N-Channel |
