Microchip Technology, Inc. MOSFET TP2635N3-G P013

The TP2635 is a P-channel enhancement-mode vertical DMOS FET designed for low-threshold switching applications such as TTL and CMOS logic interfaces, solid-state relays, and battery-operated systems. It is packaged in a TO-92 case with a maximum drain-to-source voltage of -350 V, a gate threshold voltage ranging from -0.8 V to -2.0 V, and a static drain-to-source on-resistance of up to 15 Ω at -10 V gate bias. The device has a continuous drain current rating of -0.8 A, an input capacitance of up to 300 pF, and operates over a temperature range of -55°C to +150°C. The package is RoHS compliant (indicated by the -G suffix).