The TP0610T is a P-channel enhancement-mode vertical DMOS FET designed for low-threshold switching and amplification applications. It is packaged in a 3-lead SOT-23 (TO-236AB) with dimensions of 2.90mm x 1.30mm body and a maximum height of 1.12mm. The device has a drain-to-source breakdown voltage of -60V, a gate threshold voltage ranging from -1V to -2.4V, and a static drain-to-source on-resistance of 10Ω at -10V gate bias. It operates over an ambient temperature range of -55°C to +150°C with a thermal resistance of 203°C/W. The part meets RoHS compliance and is free from thermal runaway and secondary breakdown.
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | TP0610T |
| Product Name | -60V P-Channel Enhancement-Mode MOSFET |
| Polarity | P-Channel |
