The TN5335 is an N-channel enhancement-mode vertical DMOS FET designed for low-threshold switching and amplification applications, including TTL and CMOS logic interfaces, solid-state relays, and battery-operated systems. It is available in TO-236AB (SOT-23) and TO-243AA (SOT-89) packages, with maximum drain-to-source breakdown voltage of 350V, on-resistance of 15Ω, continuous drain current of 110mA (SOT-23) or 230mA (SOT-89), and gate threshold voltage ranging from 0.6V to 2.0V. The device is RoHS compliant and has a positive temperature coefficient, free from thermal runaway and secondary breakdown.
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | TN5335 |
| Product Name | 350V N-Channel Enhancement-Mode MOSFET |
| Polarity | N-Channel |
