The TN5325 is an N-channel enhancement-mode vertical DMOS FET designed for low-threshold switching and amplification applications. It is available in 3-lead SOT-23, TO-92, and SOT-89 packages. The device has a drain-to-source breakdown voltage of 250 V, a maximum gate-to-source voltage of ±20 V, and a gate threshold voltage of up to 2 V. Its static drain-to-source on-state resistance is up to 8 Ω at 4.5 V gate drive and 150 mA drain current, or 7 Ω at 10 V gate drive and 1 A drain current. The operating ambient and storage temperature range is -55°C to +150°C. Thermal resistance for the SOT-23 package is 350 °C/W junction-to-ambient and 200 °C/W junction-to-case. The device supports logic-level interfaces for TTL and CMOS, and is suitable for solid state relays, battery-operated systems, and analog switches.
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | TN5325 |
| Product Name | 250V N-Channel Enhancement-Mode MOSFET |
| Polarity | N-Channel |
