The TN2640 is an N-channel enhancement-mode vertical DMOS FET designed for low-threshold switching and amplifying applications. It is available in 3-lead TO-252 (D-PAK), 3-lead TO-92, and 8-lead SOIC packages. The device has a drain-to-source breakdown voltage of 400 V, a maximum gate-to-source voltage of ±20 V, and a gate threshold voltage ranging from 0.8 V to 2 V. It exhibits a static drain-to-source on-state resistance of 3 Ω to 5 Ω at 10 V gate bias and 500 mA drain current, with a maximum on-state current of 3 A. The operating and storage temperature ranges are from -55°C to +150°C. Thermal resistance values are 81 °C/W for TO-252, 101 °C/W for SOIC, and 132 °C/W for TO-92. The part is Pb-free and RoHS-compliant.
This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | TN2640 |
| Product Name | 400V N-Channel Enhancement-Mode MOSFET |
| Polarity | N-Channel |
