The TN2540 is an N-channel enhancement-mode vertical DMOS FET designed for switching and amplifying applications requiring low threshold voltage, high breakdown voltage, and fast switching speeds. It is available in 3-lead TO-92 and 3-lead SOT-89 packages. The device has a drain-to-source breakdown voltage of 400 V, a maximum gate-to-source voltage of ±20 V, and a low threshold voltage of 2 V maximum. It exhibits a static drain-to-source on-state resistance of 12 Ω maximum at 10 V gate voltage and 500 mA drain current, with an on-state drain current of 1 A at 10 V gate voltage and 25 V drain voltage. Thermal resistance is 132 °C/W for TO-92 and 73 °C/W for SOT-89. The part operates from -55 °C to +150 °C and is RoHS-compliant with a Pb-free finish. It meets AEC-Q200 qualification standards.
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | TN2540 |
| Product Name | 400V N-Channel Enhancement-Mode MOSFET |
| Polarity | N-Channel |
