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Infineon Technologies AG Single FETs, MOSFETs AUIRF540ZS

  • Single FETs, MOSFETs - AUIRF540ZS-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - AUIRF540ZS - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Discrete Semiconductor - AUIRF540ZS - LIXINC Electronics Co., Limited
    LIXINC Electronics Co., Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - AUIRF540ZS - 1149798-AUIRF540ZS - Win Source Electronics
    Win Source Electronics
  • 7377451 - RS Components, Ltd.
    RS Components, Ltd.
  • 7377451P - RS Components, Ltd.
    RS Components, Ltd.
Description
N-Channel 100V 36A (Tc) 92W (Tc) Surface Mount PG-TO263-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - AUIRF540ZS-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
AUIRF540ZS-ND
Single FETs, MOSFETs AUIRF540ZS-ND
N-Channel 100V 36A (Tc) 92W (Tc) Surface Mount PG-TO263-3

N-Channel 100V 36A (Tc) 92W (Tc) Surface Mount PG-TO263-3

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - AUIRF540ZS - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
AUIRF540ZS
Discrete Semiconductor Products - Transistors - FETs, MOSFETs AUIRF540ZS
MOSFET N-CH 100V 36A D2PAK

MOSFET N-CH 100V 36A D2PAK

Supplier's Site
Discrete Semiconductor - AUIRF540ZS - LIXINC Electronics Co., Limited
LIXINC Electronics Co., Limited
Hong Kong, China
Discrete Semiconductor
AUIRF540ZS
Discrete Semiconductor AUIRF540ZS
MOSFET N-CH 100V 36A D2PAK

MOSFET N-CH 100V 36A D2PAK

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AUIRF540ZS - 1149798-AUIRF540ZS - Win Source Electronics
Win Source Electronics
Yishun, Singapore
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AUIRF540ZS
1149798-AUIRF540ZS
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AUIRF540ZS 1149798-AUIRF540ZS
Manufacturer: INTERNATIONAL RECTIFIER Win Source Part Number: 1149798-AUIRF540ZS Manufacturer Homepage: www.irf.com RoHS State: Request Verification Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited

Manufacturer: INTERNATIONAL RECTIFIER
Win Source Part Number: 1149798-AUIRF540ZS
Manufacturer Homepage: www.irf.com
RoHS State: Request Verification
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
AUIRF540ZS
MOSFET AUIRF540ZS
MOSFET AUTO 100V 1 N-CH HEXFET 26.5mOhms

MOSFET AUTO 100V 1 N-CH HEXFET 26.5mOhms

Supplier's Site Datasheet
- 7377451 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
7377451
7377451
Infineons comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. Channel Type = N Maximum Continuous Drain Current = 36 A Maximum Drain Source Voltage = 100 V Maximum Drain Source Resistance = 26.5 mOhms Maximum Gate Threshold Voltage = 4V Minimum Gate Threshold Voltage = 2V Maximum Gate Source Voltage = -20 V, +20 V Package Type = D2PAK (TO-263) Mounting Type = Surface Mount Transistor Configuration = Single

Infineons comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Channel Type = N
Maximum Continuous Drain Current = 36 A
Maximum Drain Source Voltage = 100 V
Maximum Drain Source Resistance = 26.5 mOhms
Maximum Gate Threshold Voltage = 4V
Minimum Gate Threshold Voltage = 2V
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = D2PAK (TO-263)
Mounting Type = Surface Mount
Transistor Configuration = Single

Supplier's Site
- 7377451P - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
7377451P
7377451P
Infineons comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. Channel Type = N Maximum Continuous Drain Current = 36 A Maximum Drain Source Voltage = 100 V Maximum Drain Source Resistance = 26.5 mOhms Maximum Gate Threshold Voltage = 4V Minimum Gate Threshold Voltage = 2V Maximum Gate Source Voltage = -20 V, +20 V Package Type = D2PAK (TO-263) Mounting Type = Surface Mount Transistor Configuration = Single Delivery on production packaging - Tube. This product is non-returnable.

Infineons comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Channel Type = N
Maximum Continuous Drain Current = 36 A
Maximum Drain Source Voltage = 100 V
Maximum Drain Source Resistance = 26.5 mOhms
Maximum Gate Threshold Voltage = 4V
Minimum Gate Threshold Voltage = 2V
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = D2PAK (TO-263)
Mounting Type = Surface Mount
Transistor Configuration = Single
Delivery on production packaging - Tube. This product is non-returnable.

Supplier's Site

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited LIXINC Electronics Co., Limited Win Source Electronics VAST STOCK CO., LIMITED RS Components, Ltd.
Product Category Transistors RF Transistors RF MOSFET Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number AUIRF540ZS-ND AUIRF540ZS AUIRF540ZS 1149798-AUIRF540ZS AUIRF540ZS 7377451
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Discrete Semiconductor TRANSISTORS - Transistors - FETs, MOSFETs - RF - AUIRF540ZS MOSFET
Polarity N-Channel N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D虏Pak (2 Leads + Tab), TO-263AB SOT3 D2PAK (TO-263)
Packing Method Tube; Tube Tube; Tube
PD 92000 milliwatts
Unlock Full Specs
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