The TN2510 is an N-channel enhancement-mode vertical DMOS FET for low-threshold switching applications such as TTL/CMOS interfaces and battery-operated systems. It is packaged in a 3-lead SOT-89 measuring 4.60 mm × 2.60 mm × 1.60 mm. It has a 100 V drain-to-source breakdown voltage, a 2 V maximum gate threshold, and a 1.5 Ω maximum on-resistance at VGS = 4.5 V and ID = 750 mA. Input capacitance is 125 pF maximum at VGS = 0 V. Operating ambient temperature ranges from -55°C to +150°C with a thermal resistance of 73 °C/W. The device is RoHS-compliant and immune to thermal runaway and secondary breakdown.
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | TN2510 |
| Product Name | 100V N-Channel Enhancement-Mode MOSFET |
| Polarity | N-Channel |
