The TN2124 is an N-channel enhancement-mode vertical DMOS FET designed for switching and amplifying applications requiring low threshold voltage, high breakdown voltage, and fast switching speeds. It is packaged in a 3-lead SOT-23 with a body size of 2.90 mm × 1.30 mm and a maximum height of 1.12 mm. The device has a drain-to-source breakdown voltage of 240 V, a gate threshold voltage range of 0.8 V to 2 V, and a static drain-to-source on-state resistance of 15 Ω at 4.5 V gate voltage. It features an integral source-drain diode with a forward voltage drop of up to 1.8 V and a reverse recovery time of 400 ns. The transistor is free from thermal runaway and secondary breakdown, operates within a temperature range of -55°C to +150°C, and has a thermal resistance of 203 °C/W. It is RoHS compliant and meets JEDEC TO-236AB standards.
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | TN2124 |
| Product Name | 240V N-Channel Enhancement-Mode MOSFET |
| Polarity | N-Channel |
