The TN0110 is an N-channel enhancement-mode vertical DMOS FET designed for low-threshold switching and amplification applications. It is packaged in a TO-92 case with dimensions of 5.10mm maximum height, 2.79mm maximum width, and 2.54mm lead spacing. The device has a maximum drain-to-source breakdown voltage of 100V, a gate threshold voltage of 2.0V maximum, a static drain-to-source on-resistance of 3.0Ω maximum at 10V gate voltage and 500mA drain current, and a continuous drain current rating of 350mA. It operates from -55°C to 150°C and has a thermal resistance of 132°C/W. The TN0110 is RoHS compliant and free from thermal runaway and secondary breakdown.
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | TN0110 |
| Product Name | 100V N-Channel Enhancement-Mode MOSFET |
| Polarity | N-Channel |
