Microchip Technology, Inc. MOSFET TN0106N3-G P005

N-channel enhancement-mode vertical DMOS FET in a 3-lead TO-92 package with a 60 V drain-to-source breakdown voltage, a maximum gate-source voltage of ±20 V, and a gate threshold voltage of 2.0 V max. The device has a typical on-resistance of 2.0 Ω at 10 V gate-source voltage and 500 mA drain current, with input capacitance of 50 pF typical. It operates from -55°C to 150°C and is RoHS compliant. This part is designed for low-threshold, high-impedance switching and amplification in applications such as logic-level interfaces, solid-state relays, and battery-operated systems.