Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1025274-BUK7635-100A
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 149W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 41A (Tc)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Input Capacitance: 2535pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 35 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance
N-Channel 100V 41A (Tc) 149W (Tc) Surface Mount D2PAK
N-channel TrenchMOS standard level FET D2PAK 3-Pin Product overview: BUK7635-100A,118 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BUK7635-100A,118
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1025274-BUK7635-100A,118 | 1727-7169-2-ND | 278-BUK7635-100A,118 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK7635-100A,118 | Single FETs, MOSFETs | N-Channel MOSFET Transistor |
| Polarity | N-Channel; N-Channel | N-Channel | |
| V(BR)DSS | 100 volts | ||
| PD | 149000 milliwatts | ||
| TJ | -55 to 175 C (-67 to 347 F) |