Microchip Technology, Inc. MOSFET TC8020K6-G M937

Description
MOSFET 6-Pair, N- and P-Ch Enhancement MOSFET
Description
MOSFET 6-Pair, N- and P-Ch Enhancement MOSFET
Datasheet
Datasheet Summary
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The TC8020K6-G is a six-pair integrated MOSFET device containing N- and P-channel enhancement-mode transistors in a 56-lead QFN package measuring 8mm x 8mm. Each pair features integrated gate-to-source resistors and Zener diode clamps, optimized for high-voltage pulser and driver applications. The device supports a drain-to-source voltage of ±200V, with N-channel on-resistance up to 9.0Ω and P-channel up to 9.5Ω at 25°C. Thermal resistance is 27°C/W. It operates from -55°C to +150°C and is RoHS compliant. The package is marked with lot, year, week, assembler, and country codes, and includes no other variant-specific markings.

Datasheet Summary
Powered by GS/AI

The TC8020K6-G is a six-pair integrated MOSFET device containing N- and P-channel enhancement-mode transistors in a 56-lead QFN package measuring 8mm x 8mm. Each pair features integrated gate-to-source resistors and Zener diode clamps, optimized for high-voltage pulser and driver applications. The device supports a drain-to-source voltage of ±200V, with N-channel on-resistance up to 9.0Ω and P-channel up to 9.5Ω at 25°C. Thermal resistance is 27°C/W. It operates from -55°C to +150°C and is RoHS compliant. The package is marked with lot, year, week, assembler, and country codes, and includes no other variant-specific markings.

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Sheung Wan, Hong Kong
MOSFET 6-Pair, N- and P-Ch Enhancement MOSFET

MOSFET 6-Pair, N- and P-Ch Enhancement MOSFET

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number TC8020K6-G M937
Product Name MOSFET
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