The ARF469A and ARF469B are N-channel enhancement mode RF power MOSFETs designed for push-pull amplifier applications up to 45 MHz, offering 350 W output power at 40.68 MHz with 16 dB gain in Class AB and 75% efficiency in Class C. Housed in a TO-264 package, they feature a drain-source voltage rating of 500 V, continuous drain current of 30 A, and a thermal resistance of 0.28 °C/W. They operate from -55 °C to 150 °C junction temperature and comply with AEC-Q200 qualification standards. The devices are optimized for linear and high-efficiency operation with a symmetric pinout for easy implementation as a matched pair.
The ARF family of RF power MOSFETs is optimized for applications requiring frequencies as high as 150 MHz and operating voltages as high as 400V. Historically, RF power MOSFETs were limited to applications of 50V or less. This limitation has been removed by combining Microchip’s high-voltage MOSFET technology with RF-specific die geometries.
The DRF1300 and DRF1301 have two independent channels, each containing a driver and RF MOSFET in a push-pull configuration. The DRF1400 is a half-bridge hybrid with symmetrically oriented leads that can be easily configured into a full-bridge converter. All DRF parts feature a proprietary anti-ring function to eliminate cross conduction in bridge or push-pull topologies. All DRF parts can be externally selected in either an inverting or non-inverting configuration.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RF-MOSFET-500V |
| Product Name | 500V RF MOSFET |
