BGA7H1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 1805 MHz to 2690 Mhz and operates from1.5 V to 3.3 V supply voltage. The device features a single-line two-state control (Bypass- and High gain-Mode) and OFF-state can be enabled by powering down Vcc
Summary of Features:
- Insertion power gain: 12.3 dB
- Low noise figure: 0.85 dB
- Low current consumption: 4.3 mA
- Insertion loss in bypass mode: -3.1 dB
- Operating frequencies: 1805 - 2690 MHz
- Two-state control: Bypass- and high gain-mode
- Supply voltage: 1.5 V to 3.6 V
- Digital on/off switch (1V logic high level)
- Ultra small TSNP-6-2 leadless package (footprint: 0.7 x 1.1 mm2)
- B7HF Silicon Germanium technology
- RF output internally matched to 50 Ω
- Only 1 external SMD component necessary
- Pb-free (RoHS compliant) package
Target Applications:
- LNA for LTE reception in smart phones, feature phones, tablet PCs and RF front-end modules.
| Infineon Technologies AG | |
|---|---|
| Product Category | RF Amplifiers |
| Product Number | BGA7H1BN6 |
| Product Name | LTE / 3G LNAs |
| Applications | Mobile / Wireless Systems |
| RoHS Compliant | RoHS |
| Frequency Range | 1805 to 2690 MHz |
| Minimum Gain | 12.3 dB |
| Maximum Gain | 12.3 dB |
