Advanced Linear Devices, Inc. Complementary N-Channel and P-Channel MOSFET Array ALD1115PAL

Description
MOSFET Array N and P-Channel Complementary 10.6V - 500mW Through Hole 8-PDIP
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Description
MOSFET Array N and P-Channel Complementary 10.6V - 500mW Through Hole 8-PDIP
Request a Quote
Datasheet
Datasheet Summary
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The ALD1115PAL is an 8-pin plastic dual in-line package (PDIP) containing a matched complementary N-channel and P-channel MOSFET pair for analog switching and amplification in +1V to +10V systems. Both transistors feature a typical threshold voltage of 0.7V, input impedance of 10¹³Ω, and gate leakage current of 100pA at 25°C. The pair offers thermal tracking, negative current temperature coefficient, and drain-source breakdown voltage of ±10V. Maximum power dissipation is 500mW, with an operating temperature range of 0°C to +70°C. The device meets RoHS standards. It is designed for precision current mirrors, differential amplifiers, and CMOS analog switches.

Datasheet Summary
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The ALD1115PAL is an 8-pin plastic dual in-line package (PDIP) containing a matched complementary N-channel and P-channel MOSFET pair for analog switching and amplification in +1V to +10V systems. Both transistors feature a typical threshold voltage of 0.7V, input impedance of 10¹³Ω, and gate leakage current of 100pA at 25°C. The pair offers thermal tracking, negative current temperature coefficient, and drain-source breakdown voltage of ±10V. Maximum power dissipation is 500mW, with an operating temperature range of 0°C to +70°C. The device meets RoHS standards. It is designed for precision current mirrors, differential amplifiers, and CMOS analog switches.

Suppliers

Company
Product
Description
Supplier Links
Complementary N-Channel and P-Channel MOSFET Array - ALD1115PAL - Advanced Linear Devices, Inc.
Sunnyvale, CA, United States
Complementary N-Channel and P-Channel MOSFET Array
ALD1115PAL
Complementary N-Channel and P-Channel MOSFET Array ALD1115PAL
MOSFET Array N and P-Channel Complementary 10.6V - 500mW Through Hole 8-PDIP

MOSFET Array N and P-Channel Complementary 10.6V - 500mW Through Hole 8-PDIP

Supplier's Site Datasheet
FET, MOSFET Arrays - 1014-1044-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1014-1044-ND
FET, MOSFET Arrays 1014-1044-ND
Mosfet Array N and P-Channel Complementary 10.6V 500mW Through Hole 8-PDIP

Mosfet Array N and P-Channel Complementary 10.6V 500mW Through Hole 8-PDIP

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - ALD1115PAL - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
ALD1115PAL
Discrete Semiconductor Products - Transistors - FETs, MOSFETs ALD1115PAL
MOSFET N/P-CH 10.6V 8DIP

MOSFET N/P-CH 10.6V 8DIP

Supplier's Site

Technical Specifications

  Advanced Linear Devices, Inc. DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number ALD1115PAL 1014-1044-ND ALD1115PAL
Product Name Complementary N-Channel and P-Channel MOSFET Array FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MOSFET Operating Mode Enhancement; Enhancement Mode
V(BR)DSS 12 volts
IDSS -2 to 4.8 milliamps
rDS(on) 500 to 1800 ohms
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