Microchip Technology, Inc. RF & MW Power Amplifier ICP1137-1-110I

Description
ICP1137 is a 2-stage MMIC power amplifier in bare die form, fabricated using GaN on SiC technology. ICP1137 operates from 2 GHz to 18 GHz with 37 dBm output power, 20% PAE, and 18 dB small signal gain. ICP1137 is well suited to commercial, test and measurement, and defense applications.
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Description
ICP1137 is a 2-stage MMIC power amplifier in bare die form, fabricated using GaN on SiC technology. ICP1137 operates from 2 GHz to 18 GHz with 37 dBm output power, 20% PAE, and 18 dB small signal gain. ICP1137 is well suited to commercial, test and measurement, and defense applications.
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Suppliers

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RF & MW Power Amplifier - ICP1137-1-110I - Richardson RFPD
Downers Grove, IL, United States
RF & MW Power Amplifier
ICP1137-1-110I
RF & MW Power Amplifier ICP1137-1-110I
ICP1137 is a 2-stage MMIC power amplifier in bare die form, fabricated using GaN on SiC technology. ICP1137 operates from 2 GHz to 18 GHz with 37 dBm output power, 20% PAE, and 18 dB small signal gain. ICP1137 is well suited to commercial, test and measurement, and defense applications.

ICP1137 is a 2-stage MMIC power amplifier in bare die form, fabricated using GaN on SiC technology. ICP1137 operates from 2 GHz to 18 GHz with 37 dBm output power, 20% PAE, and 18 dB small signal gain. ICP1137 is well suited to commercial, test and measurement, and defense applications.

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF Amplifiers
Product Number ICP1137-1-110I
Product Name RF & MW Power Amplifier
Amplifier Type Power Amplifier
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