Microchip Technology, Inc. JFETs 2N4859

N-channel J-FET for general-purpose switching and amplification, available in a TO-18 package. It has a gate-source breakdown voltage of 30 V, a drain-source voltage rating of 30 V, and a maximum power dissipation of 0.36 W at 25°C. The gate-source cutoff voltage ranges from -4.0 V to -10 V, with a zero-gate-voltage drain current of 50 mA to 175 mA. The device meets MIL-PRF-19500/385 equivalence and has an operating junction and storage temperature range of -65°C to +200°C.