Microchip Technology, Inc. Single Bipolar Transistors 2N3960UB/TR

The 2N3960UB is a military-qualified NPN silicon switching transistor in a low-profile ceramic UB package, designed for high-reliability applications. It has a collector-emitter voltage rating of 12 V, collector-base voltage of 20 V, and emitter-base voltage of 4.5 V, with a total power dissipation of 400 mW at 25 °C. The device features a forward-current transfer ratio ranging from 30 to 300 depending on collector current, and a collector-emitter saturation voltage of up to 0.3 V at 30 mA collector current. It meets MIL-PRF-19500/399 qualification levels up to JANTXV and is RoHS compliant. The package dimensions are 0.115 to 0.128 inches in length and 0.085 to 0.108 inches in width, with a weight under 0.04 grams. The part is surface-mount compatible and available with gold-plated terminals.