Micro Commercial Components Corp. Single FETs, MOSFETs SICW040N120Y4-BP

SICW040N120Y4-BP is a silicon carbide N-channel MOSFET designed for high-voltage applications such as solar inverters, switch-mode power supplies, and motor drives. It is packaged in a TO-247-4 case with dimensions of 23.30-23.60 mm length, 16.25-16.77 mm width, and 17.30-17.75 mm lead length. The device has a drain-source voltage rating of 1200 V, a continuous drain current of 63 A at 25°C case temperature, and a drain-source on-resistance of 42 mΩ at 25°C with gate-source voltage of 20 V and 40 A drain current. Its operating junction temperature ranges from -55°C to +175°C, with a thermal resistance of 0.38°C/W junction-to-case. The MOSFET is halogen-free, RoHS compliant, and meets UL 94 V-0 flammability requirements.