Micro Commercial Components Corp. Single FETs, MOSFETs SICW021N120P4-BP

SIC MOSFET in TO-247-4L package rated for 1200 V drain-source voltage, with a continuous drain current of 71 A at 100°C, and a pulsed drain current of 250 A. Features include a gate-source voltage range of -10 V to +22 V, operating junction temperature from -55°C to +175°C, thermal resistance junction-to-case of 0.32°C/W, and integrated fast intrinsic diode with reverse recovery time of 22 ns. RoHS compliant and halogen-free. Designed for solar inverters, EV charging stations, UPS, and industrial power supplies.