Qorvo DC - 3.2 GHz, 125 Watt, 50 Volt GaN RF Power Transistor QPD1008L

Description
Qorvo's QPD1008L is a 125 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.2 GHz and a 50V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed, CW, and linear operations. Lead-free and ROHS compliant Evaluation boards are available upon request.
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Description
Qorvo's QPD1008L is a 125 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.2 GHz and a 50V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed, CW, and linear operations. Lead-free and ROHS compliant Evaluation boards are available upon request.
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
DC - 3.2 GHz, 125 Watt, 50 Volt GaN RF Power Transistor - QPD1008L - Qorvo
Greensboro, NC, United States
DC - 3.2 GHz, 125 Watt, 50 Volt GaN RF Power Transistor
QPD1008L
DC - 3.2 GHz, 125 Watt, 50 Volt GaN RF Power Transistor QPD1008L
Qorvo's QPD1008L is a 125 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.2 GHz and a 50V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed, CW, and linear operations. Lead-free and ROHS compliant Evaluation boards are available upon request.

Qorvo's QPD1008L is a 125 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.2 GHz and a 50V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed, CW, and linear operations.

Lead-free and ROHS compliant

Evaluation boards are available upon request.

Supplier's Site Datasheet
RF FETs, MOSFETs - 2312-QPD1008L-ND - DigiKey
Thief River Falls, MN, United States
RF FETs, MOSFETs
2312-QPD1008L-ND
RF FETs, MOSFETs 2312-QPD1008L-ND
RF TRANSISTOR 125W 50V NI-360

RF TRANSISTOR 125W 50V NI-360

Buy Now Datasheet
Sheung Wan, Hong Kong
RF JFET Transistors
QPD1008L
RF JFET Transistors QPD1008L
RF JFET Transistors DC-3.2GHz 120W 50V SSG 17.5dB GaN

RF JFET Transistors DC-3.2GHz 120W 50V SSG 17.5dB GaN

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Technical Specifications

  Qorvo DigiKey VAST STOCK CO., LIMITED
Product Category RF Transistors Transistors Transistors
Product Number QPD1008L 2312-QPD1008L-ND QPD1008L
Product Name DC - 3.2 GHz, 125 Watt, 50 Volt GaN RF Power Transistor RF FETs, MOSFETs RF JFET Transistors
Transistor Technology / Material GaN
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