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Qorvo DC - 3.2 GHz, 125 Watt, 50 Volt GaN RF Power Transistor QPD1008L

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DC - 3.2 GHz, 125 Watt, 50 Volt GaN RF Power Transistor - QPD1008L - Qorvo
Greensboro, NC, United States
DC - 3.2 GHz, 125 Watt, 50 Volt GaN RF Power Transistor
QPD1008L
DC - 3.2 GHz, 125 Watt, 50 Volt GaN RF Power Transistor QPD1008L
Qorvo's QPD1008L is a 125 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.2 GHz and a 50V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed, CW, and linear operations. Lead-free and ROHS compliant Evaluation boards are available upon request.

Qorvo's QPD1008L is a 125 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.2 GHz and a 50V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed, CW, and linear operations.

Lead-free and ROHS compliant

Evaluation boards are available upon request.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
RF JFET Transistors
QPD1008L
RF JFET Transistors QPD1008L
RF JFET Transistors DC-3.2GHz 120W 50V SSG 17.5dB GaN

RF JFET Transistors DC-3.2GHz 120W 50V SSG 17.5dB GaN

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Technical Specifications

  Qorvo VAST STOCK CO., LIMITED
Product Category RF Transistors Transistors
Product Number QPD1008L QPD1008L
Product Name DC - 3.2 GHz, 125 Watt, 50 Volt GaN RF Power Transistor RF JFET Transistors
Transistor Technology / Material GaN
Transistor Grade / Operating Range Military
Package Type NI-360
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